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A29800 series 1024k x 8 bit / 512k x 16 bit cmos 5.0 volt - only, preliminary boot sector flash memory preliminary (may, 2001, version 0.0) 1 amic technology, inc. features n 5.0v 10% for read and write operations n access time s: - 55/70/90 (max.) n current: - 28ma read current (word mode) - 20 ma typical active read current (byte mode) - 30 ma typical program/erase current - 1 m a typical cmos standby n flexible sector architecture - 16 kbyte/ 8 kbytex2/ 32 kbyte/ 64 kbytex1 5 sectors - 8 kword/ 4 kwordx2/ 16 kword/ 32 kwordx15 sectors - any combination of sectors can be erased - supports full chip erase - sector protection: a hardware method of protecting sectors to prevent any inadvertent program or erase operations within that sect or n top or bottom boot block configurations available n embedded erase algorithms - embedded erase algorithm will automatically erase the entire chip or any combination of designated sectors and verify the erased sectors - embedded program algorithm aut omatically writes and verifies bytes at specified addresses n typical 100,000 program/erase cycles per sector n 20 - year data retention at 125 c - reliable operation for the life of the system n compatible with jedec - standards - pinout and software compat ible with single - power - supply flash memory standard - superior inadvertent write protection n data polling and toggle bits - provides a software method of detecting completion of program or erase operations n erase suspend/erase resume - suspends a sector erase operation to read data from, or program data to, a non - erasing sector, then resumes the erase operation n hardware reset pin ( reset ) - hardware method to reset the device to reading array data n package options - 44 - pin sop or 48 - p in tsop (i) general description the A29800 is a 5.0 volt only flash memory organized as 1048,576 bytes of 8 bits or 524,288 words of 16 bits each. the A29800 offers the reset function. the 1024 kbytes of data are further divided into n ineteen sectors for flexible sector erase capability. the 8 bits of data appear on i/o 0 - i/o 7 while the addresses are input on a1 to a18; the 16 bits of data appear on i/o 0 ~i/o 15 . the A29800 is offered in 44 - pin sop and 48 - pin tsop packages. this device i s designed to be programmed in - system with the standard system 5.0 volt vcc supply. additional 12.0 volt vpp is not required for in - system write or erase operations. however, the A29800 can also be programmed in standard eprom programmers. the A29800 has the first toggle bit, i/o 6 , which indicates whether an embedded program or erase is in progress, or it is in the erase suspend. besides the i/o 6 toggle bit, the A29800 has a second toggle bit, i/o 2 , to indicate whether the addressed sector is being selecte d for erase. the A29800 also offers the ability to program in the erase suspend mode. the standard A29800 offers access times of 55, 70 and 90 ns, allowing high - speed microprocessors to operate without wait states. to eliminate bus contention the device h as separate chip enable ( ce ), write enable ( we ) and output enable ( oe ) controls. the device requires only a single 5.0 volt power supply for both read and write functions. internally generated and regulated voltages are provided for the program and erase operations. the A29800 is entirely software command set compatible with the jedec single - power - supply flash standard. commands are written to the command register using standard microprocessor write timings. register contents serve as input to an internal state - machine that controls the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. reading data out of the d evice is similar to reading from other flash or eprom devices. device programming occurs by writing the proper program command sequence. this initiates the embedded program algorithm - an internal algorithm that automatically times the program pulse width s and verifies proper program margin. device erasure occurs by executing the proper erase command sequence. this initiates the embedded erase algorithm - an internal algorithm that automatically preprograms the array (if it is not already programmed) befo re executing the erase operation.
A29800 series preliminary (may, 2001, version 0.0) 2 amic technology, inc. during erase, the device automatically times the erase pulse widths and verifies proper erase margin. the host system can detect whether a program or erase operation is complete by reading the i/o 7 ( data polling) and i/o 6 (toggle) status bits. after a program or erase cycle has been completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and reprogrammed without affe cting the data contents of other sectors. the A29800 is fully erased when shipped from the factory. the hardware sector protection feature disables operations for both program and erase in any combination of the pin configurations sectors of memory. th is can be achieved via programming equipment. the erase suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any other sector that is not selected for erasure. true background erase can thus b e achieved. power consumption is greatly reduced when the device is placed in the standby mode. the hardware reset pin terminates any operation in progress and resets the internal state machine to reading array data. n sop n tsop (i) ry/by a17 a7 a6 a5 a4 a3 a2 a1 a0 ce vss oe i/o 0 i/o 14 i/o 8 i/o 7 i/o 15 (a-1) vss byte a16 a15 a14 a12 a11 a10 we a8 a9 a13 A29800 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 reset 17 18 19 20 21 22 28 27 26 25 24 23 i/o 1 i/o 9 i/o 2 i/o 10 i/o 3 i/o 11 i/o 6 i/o 13 i/o 5 i/o 12 i/o 4 vcc A29800v 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 a14 a13 a12 a11 a10 a9 a8 nc we reset nc nc ry/by a18 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 i/o 2 i/o 10 i/o 3 i/o 11 vcc i/o 4 i/o 12 i/o 5 i/o 13 i/o 6 i/o 14 i/o 7 i/o 15 (a-1) vss byte a16 a15 nc 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 i/o 9 i/o 1 i/o 8 i/o 0 oe vss ce a0 a17 a7 a6 a5 a4 a3 a2 a1 a18
A29800 series preliminary (may, 2001, version 0.0) 3 amic technology, inc. block diagram pin descriptions pin no. description a0 - a18 address inputs i/o 0 - i/o 14 data inputs/outputs i/o 15 data input/output, word mode i/o 15 (a - 1) a - 1 lsb address input, byte mode ce chip enable we write enable oe output enable reset hardware reset (n/a A298001) byte selects byte mode or word mode ry/ by ready/ busy - output vss ground vcc power supply state control command register address latch x-decoder y-decoder chip enable output enable logic cell matrix y-gating vcc detector pgm voltage generator data latch input/output buffers erase voltage generator vcc vss we ce oe a 0 -a 18 i/o 0 - i/o 15 (a-1) timer stb stb reset sector switches byte ry/by
A29800 series preliminary (may, 2001, version 0.0) 4 amic technology, inc. absolute maximum ratings* ambient operating temperature . . . . . - 55 c to + 125 c storage temperature . . . . . . . . . . . . . . - 65 c to + 125 c ground to vcc . . . . . . . . . . . . . . . . . . . . . . - 2.0v to 7.0v output voltage (note 1) . . . . . . . . . . . . . . . - 2.0v to 7.0v a9, oe & reset (note 2) . . . . . . . . . . . - 2.0v to 12.5v all other pins (note 1) . . . . . . . . . . . . . . . . . - 2.0v to 7.0 v output short circuit current (note 3) . . . . . . . . . . 200ma notes: 1. minimum dc voltage on input or i/o pins is - 0.5v. during voltage transitions, inputs may undershoot vss to - 2.0v for periods of up to 20ns. maximum dc voltage on output and i/o pi ns is vcc +0.5v. during voltage transitions, outputs may overshoot to vcc +2.0v for periods up to 20ns. 2. minimum dc input voltage on a9 pins is - 0.5v. during voltage transitions, a9, oe and reset may overshoot vss to - 2. 0v for periods of up to 20ns. maximum dc input voltage on a9 and oe is +12.5v which may overshoot to 13.5v for periods up to 20ns. 3. no more than one output is shorted at a time. duration of the short circuit should not be greater than one second. *comments stresses above those listed under "absolute maximum ratings" may cause permanent damage to this device. these are stress ratings only. functional operation of this device at these or any other conditions above those indicated in the operational sections of these specification is not implied or intended. exposure to the absolute maximum rating conditions for extended periods may affect device reliability. operating ranges commercial (c) devices ambient temperature (t a ) . . . . . . . . . . . . . . 0 c to +70 c vcc supply voltages vcc for 10% devices . . . . . . . . . . . . . . +4.5v to +5.5v operating ranges define those limits between which the functionally of the device is guaranteed. device bus operations this section descri bes the requirements and use of the device bus operations, which are initiated through the internal command register. the command register itself does not occupy any addressable memory location. the register is composed of latches that store the commands, along with the address and data information needed to execute the command. the contents of the register serve as inputs to the internal state machine. the state machine outputs dictate the function of the device. the appropriate device bus operations tabl e lists the inputs and control levels required, and the resulting output. the following subsections describe each of these operations in further detail. table 1. A29800 device bus operations i/o 8 - i/o 15 operation ce oe we reset a0 - a18 i/o 0 - i/o 7 byte =v ih byte =v il read l l h h a in d out d out high - z write l h l h a in d in d in high - z cmos standby vcc 0.5 v x x vcc 0.5 v x hi gh - z high - z high - z ttl standby h x x h x high - z high - z high - z output disable l h h h x high - z high - z high - z hardware reset x x x l x high - z high - z high - z temporary sector unprotect (see note) x x x v id a in d in d in x legend: l = logic low = v il , h = l ogic high = v ih , v id = 12.0 0.5v, x = don't care, d in = data in, d out = data out, a in = address in note: see the "sector protection/unprotection" section and temporary sector unprotect for more information.
A29800 series preliminary (may, 2001, version 0.0) 5 amic technology, inc. word/byte configuration the byte pin determines whether the i/o pins i/o 15 - i/o 0 operate in the byte or word configuration. if the byte pin is set at logic ?1?, the device is in word configuration, i/o 15 - i/o 0 are active and controlled by ce and oe . if the byte pin is set at logic ?0?, the device is in byte configuration, and only i/o 0 - i/o 7 are active and controlled by ce and oe . i/o 8 - i/o 14 are tri - stated, and i/ o 15 pin is used as an input for the lsb(a - 1) address function. requirements for reading array data to read array data from the outputs, the system must drive the ce and oe pins to v il . ce is the power control and selects the device. oe is the output control and gates array data to the output pins. we should remain at v ih all the time during read operation. the internal state machine is set for reading arr ay data upon device power - up, or after a hardware reset. this ensures that no spurious alteration of the memory content occurs during the power transition. no command is necessary in this mode to obtain array data. standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. the device remains enabled for read access until the command register contents are altered. see "reading array data" for more information. refer to the ac r ead operations table for timing specifications and to the read operations timings diagram for the timing waveforms, l cc1 in the dc characteristics table represents the active current specification for reading array data. writing commands/command sequences to write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive we and ce to v il , and oe to v ih . an erase operation can erase one sector, multiple sectors, or the entire device. the sector address tables indicate the address range that each sector occupies. a "sector address" consists of the address inputs required to uniquely select a sector. see the "command definiti ons" section for details on erasing a sector or the entire chip, or suspending/resuming the erase operation. after the system writes the autoselect command sequence, the device enters the autoselect mode. the system can then read autoselect codes from the internal register (which is separate from the memory array) on i/o 7 - i/o 0 . standard read cycle timings apply in this mode. refer to the "autoselect mode" and "autoselect command sequence" sections for more information. i cc2 in the dc characteristics tabl e represents the active current specification for the write mode. the "ac characteristics" section contains timing specification tables and timing diagrams for write operations. program and erase operation status during an erase or program operation, the system may check the status of the operation by reading the status bits on i/o 7 - i/o 0 . standard read cycle timings and i cc read specifications apply. refer to "write operation status" for more information, and to each ac characteristics section for timin g diagrams. standby mode when the system is not reading or writing to the device, it can place the device in the standby mode. in this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of th e oe input. the device enters the cmos standby mode when the ce & reset pins are both held at v cc 0.5v. (note that this is a more restricted voltage range than v ih .) the device enters the ttl st andby mode when ce is held at v ih , while reset is held at vcc 0.5v. the device requires the standard access time (t ce ) before it is ready to read data. if the device is deselected during erasure or programming, the d evice draws active current until the operation is completed. i cc3 in the dc characteristics tables represents the standby current specification. output disable mode when the oe input is at v ih , output from the device is disabled. th e output pins are placed in the high impedance state. reset : hardware reset pin the reset pin provides a hardware method of resetting the device to reading array data. when the system drives the reset pin low for at least a period of t rp , the device immediately terminates any operation in progress, tristates all data output pins, and ignores all read/write attempts for the duration of the reset pulse. the device also resets the interna l state machine to reading array data. the operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. the reset pin may be tied to the system reset circuitry . a system reset would thus also reset the flash memory, enabling the system to read the boot - up firmware from the flash memory. refer to the ac characteristics tables for reset parameters and diagram.
A29800 series preliminary (may, 2001, version 0.0) 6 amic technology, inc. table 2. A29800 top boot block sec tor address table address range (in hexadecimal) sector a18 a17 a16 a15 a14 a13 a12 sector size (kbytes/ kwords) (x16) address range (x8) address range sa0 0 0 0 0 x x x 64/32 00000h - 07fffh 00000h - 0ffffh sa1 0 0 0 1 x x x 64/32 08000h - 0f fffh 10000h - 1ffffh sa2 0 0 1 0 x x x 64/32 10000h - 17fffh 20000h - 2ffffh sa3 0 0 1 1 x x x 64/32 18000h - 1ffffh 30000h - 3ffffh sa4 0 1 0 0 x x x 64/32 20000h - 27fffh 40000h - 4ffffh sa5 0 1 0 1 x x x 64/32 28000h - 2ffffh 50000h - 5ffffh sa6 0 1 1 0 x x x 64/32 30000h - 37fffh 60000h - 6ffffh sa7 0 1 1 1 x x x 64/32 38000h - 3ffffh 70000h - 7ffffh sa8 1 0 0 0 x x x 64/32 40000h - 47fffh 80000h - 8ffffh sa9 1 0 0 1 x x x 64/32 48000h - 4ffffh 90000h - 9ffffh sa10 1 0 1 0 x x x 64/32 50000h - 57fffh a0000h - affffh sa11 1 0 1 1 x x x 64/32 58000h - 5ffffh b0000h - bffffh sa12 1 1 0 0 x x x 64/32 60000h - 67fffh c0000h - cffffh sa13 1 1 0 1 x x x 64/32 68000h - 6ffffh d0000h - dffffh sa14 1 1 1 0 x x x 64/32 70000h - 77fffh e0000h - effffh sa15 1 1 1 1 0 x x 32/16 78000h - 7bfffh f0000h - f7fffh sa16 1 1 1 1 1 0 0 8/4 7c000h - 7cfffh f8000h - f9fffh sa17 1 1 1 1 1 0 1 8/4 7d000h - 7dfffh fa000h - fbfffh sa18 1 1 1 1 1 1 x 16/8 7e000h - 7ffffh fc000h - fffffh note: address range is a18: a - 1 in byte mod and a18: a0 in word mode. see the ?word/byte configuration? section for more information.
A29800 series preliminary (may, 2001, version 0.0) 7 amic technology, inc. table 3. A29800 bottom boot block sector address table address range sector a18 a17 a16 a15 a14 a13 a12 sector size (kbytes / kwords) (x 16) addre ss range (x 8) address range sa0 0 0 0 0 0 0 x 16/8 00000h - 01fffh 00000h - 03fffh sa1 0 0 0 0 0 1 0 8/4 02000h - 02fffh 04000h - 05fffh sa2 0 0 0 0 0 1 1 8/4 03000h - 03fffh 06000h - 07fffh sa3 0 0 0 0 1 x x 32/16 04000h - 07fffh 08000h - 0ffffh sa4 0 0 0 1 x x x 64/32 08000h - 0ffffh 10000h - 1ffffh sa5 0 0 1 0 x x x 64/32 10000h - 17fffh 20000h - 2ffffh sa6 0 0 1 1 x x x 64/32 18000h - 1ffffh 30000h - 3ffffh sa7 0 1 0 0 x x x 64/32 20000h - 27fffh 40000h - 4ffffh sa8 0 1 0 1 x x x 64/32 28000h - 2ffffh 50000h - 5ffffh sa9 0 1 1 0 x x x 64/32 30000h - 37fffh 60000h - 6ffffh sa10 0 1 1 1 x x x 64/32 38000h - 3ffffh 70000h - 7ffffh sa11 1 0 0 0 x x x 64/32 40000h - 47fffh 80000h - 8ffffh sa12 1 0 0 1 x x x 64/32 48000h - 4ffffh 90000h - 9ffffh sa13 1 0 1 0 x x x 64/32 50000h - 57fffh a0000h - affffh sa14 1 0 1 1 x x x 64/32 58000h - 5ffffh b0000h - bffffh sa15 1 1 0 0 x x x 64/32 60000h - 67fffh c0000h - cffffh sa16 1 1 0 1 x x x 64/32 68000h - 6ffffh d0000h - dffffh sa17 1 1 1 0 x x x 64/3 2 70000h - 77fffh e0000h - effffh sa18 1 1 1 1 x x x 64/32 78000h - 7ffffh f0000h - fffffh note: address range is a18: a - 1 in byte mode and a18: a0 in word mode. see the ?word/byte configuration? section for more information autoselect mode the autosel ect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on i/o 7 - i/o 0 . this mode is primarily intended for programming equipment to automatically match a device to be programmed with i ts corresponding programming algorithm. however, the autoselect codes can also be accessed in - system through the command register. when using programming equipment, the autoselect mode requires v id (11.5v to 12.5 v) on address pin a9. address pins a6, a1, and a0 must be as shown in autoselect codes (high voltage method) table. in addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits. refer to the corresponding sector address tables. the c ommand definitions table shows the remaining address bits that are don't care. when all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on i/o 7 - i/o 0 . to access the autoselect codes in - sy stem, the host system can issue the autoselect command via the command register, as shown in the command definitions table. this method does not require v id . see "command definitions" for details on using the autoselect mode.
A29800 series preliminary (may, 2001, version 0.0) 8 amic technology, inc. table 4. A29800 autoselect codes (high voltage method) description mode ce oe we a18 to a12 a11 to a10 a9 a8 to a7 a6 a5 to a2 a1 a0 i/o 8 to i/o 15 i/o 7 to i/o 0 manufacturer id: amic l l h x x v id x l x l l x 37h word b3h 0eh device id: A29800 (top boot block) byte l l h x x v id x l x l h x 0eh word b3h 8fh device id: A29800 (bottom boot block) byte l l h x x v id x l x l h x 8fh continuation id l l h x x v id x l x h h x 7fh x 01h (protected) sector prot ection verification l l h sa x v id x l x h l x 00h (unprotected) l=logic low= v il , h=logic high=v ih , sa=sector address, x=don?t care.
A29800 series preliminary (may, 2001, version 0.0) 9 amic technology, inc. sector protection/unprotection the hardware sector protection feature disables both pro gram and erase operations in any sector. the hardware sector unprotection feature re - enables both program and erase operations in previously protected sectors. sector protection/unprotection must be implemented using programming equipment. the procedure r equires a high voltage (v id ) on address pin a9 and the control pins. the device is shipped with all sectors unprotected. it is possible to determine whether a sector is protected or unprotected. see "autoselect mode" for details. hardware data protection the requirement of command unlocking sequence for programming or erasing provides data protection against inadvertent writes (refer to the command definitions table). in addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during v cc power - up transitions, or from system noise. the device is powered up to read array data to avoid accidentally writing data to the array. write pulse "glitch" prote ction noise pulses of less than 5ns (typical) on oe , ce or we do not initiate a write cycle. logical inhibit write cycles are inhibited by holding any one of oe =v il , ce = v ih or we = v ih . to initiate a write cycle, ce and we must be a logical zero while oe is a logical one. power - up write inhibit if we = ce = v il and oe = v ih during power up, the device does not accept commands on the rising edge of we . the internal state machine is automatically reset to reading array data on the init ial power - up. temporary sector unprotect this feature allows temporary unprotection of previous protected sectors to change data in - system. the sector unprotect mode is activated by setting the reset pin to v id . during this mode, formerl y protected sectors can be programmed or erased by selecting the sector addresses. once v id is removed from the reset pin, all the previously protected sectors are protected again. figure 1 shows the algorithm, and the temporary sector un protect diagram shows the timing waveforms, for this feature. start reset = v id (note 1) perform erase or program operations reset = v ih temporary sector unprotect completed (note 2) notes: 1. all protected sectors unprotected. 2. all previously protected sectors are protected once again. figure 1. temporary sector unprotect operation
A29800 series preliminary (may, 2001, version 0.0) 10 amic technology, inc. command definitions writing specific address and data commands or sequences into the command register initiates device operations. the command definitions table defines the valid register com mand sequences. writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. all addresses are latched on the falling edge of we or ce , whichever happ ens later. all data is latched on the rising edge of we or ce , whichever happens first. refer to the appropriate timing diagrams in the "ac characteristics" section. reading array data the device is automatically set to reading array data after device power - up. no commands are required to retrieve data. the device is also ready to read array data after completing an embedded program or embedded erase algorithm. after the device accepts an erase suspend command, th e device enters the erase suspend mode. the system can read array data using the standard read timings, except that if it reads at an address within erase - suspended sectors, the device outputs status data. after completing a programming operation in the er ase suspend mode, the system may once again read array data with the same exception. see "erase suspend/erase resume commands" for more information on this mode. the system must issue the reset command to re - enable the device for reading array data if i/o 5 goes high, or while in the autoselect mode. see the "reset command" section, next. see also "requirements for reading array data" in the "device bus operations" section for more information. the read operations table provides the read parameters, and re ad operation timings diagram shows the timing diagram. reset command writing the reset command to the device resets the device to reading array data. address bits are don't care for this command. the reset command may be written between the sequence cycl es in an erase command sequence before erasing begins. this resets the device to reading array data. once erasure begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cyc les in a program command sequence before programming begins. this resets the device to reading array data (also applies to programming in erase suspend mode). once programming begins, however, the device ignores reset commands until the operation is comple te. the reset command may be written between the sequence cycles in an autoselect command sequence. once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during erase suspend). if i/o 5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during erase suspend). autoselect command sequence the autoselect command sequence allows the host system to access the manuf acturer and devices codes, and determine whether or not a sector is protected. the command definitions table shows the address and data requirements. this method is an alternative to that shown in the autoselect codes (high voltage method) table, which is intended for prom programmers and requires v id on address bit a9. the autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. the device then enters the autoselect mode, and the system may read at any addr ess any number of times, without initiating another command sequence. a read cycle at address xx00h retrieves the manufacturer code and another read cycle at xx11h retrieves the continuation code. a read cycle at address xx01h in word mode (or 02h in byte mode) returns the device code. a read cycle containing a sector address (sa) and the address 02h in returns 01h if that sector is protected, or 00h if it is unprotected. refer to the sector address tables for valid sector addresses. the system must write the reset command to exit the autoselect mode and return to reading array data. word/byte program command sequence the system may program the device by word or byte, depending on the state of the byte pin. programming is a four - bus - cy cle operation. the program command sequence is initiated by writing two unlock write cycles, followed by the program set - up command. the program address and data are written next, which in turn initiate the embedded program algorithm. the system is not req uired to provide further controls or timings. the device automatically provides internally generated program pulses and verify the programmed cell margin. table 5 shows the address and data requirements for the byte program command sequence. when the embed ded program algorithm is complete, the device then returns to reading array data and addresses are longer latched. the system can determine the status of the program operation by using i/o 7 , i/o 6 , or ry/ by . see ?white operation status? for information on these status bits. any commands written to the device during the embedded program algorithm are ignored. not that a hardware reset immediately terminates the programming operation. the byte program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. programming is allowed in any sequence and across sector boundaries. a bit cannot be programmed from a ?0? back to a ?1?. attempting to do so may halt the operation and set i/o5 t o ?1?, or cause the data polling algorithm to indicate the operation was successful. however, a succeeding read will show that the data is still ?0?. only erase operations can convert a ?0? to a ?1?.
A29800 series preliminary (may, 2001, version 0.0) 11 amic technology, inc. chip erase command sequence chip erase is a six - bus - cycle operation. the chip erase command sequence is initiated by writing two unlock cycles, followed by a set - up command. two additional unlock write cycles are then followed by the chip erase comma nd, which in turn invokes the embedded erase algorithm. the device does not require the system to preprogram prior to erase. the embedded erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electri cal erase. the system is not required to provide any controls or timings during these operations. the command definitions table shows the address and data requirements for the chip erase command sequence. any commands written to the chip during the embed ded erase algorithm are ignored. the system can determine the status of the erase operation by using i/o 7 , i/o 6 , or i/o 2 . see "write operation status" for information on these status bits. when the embedded erase algorithm is complete, the device returns t o reading array data and addresses are no longer latched. figure 3 illustrates the algorithm for the erase operation. see the erase/program operations tables in "ac characteristics" for parameters, and to the chip/sector erase operation timings for timing waveforms. sector erase command sequence sector erase is a six - bus - cycle operation. the sector erase command sequence is initiated by writing two unlock cycles, followed by a set - up command. two additional unlock write cycles are then followed by the ad dress of the sector to be erased, and the sector erase command. the command definitions table shows the address and data requirements for the sector erase command sequence. the device does not require the system to preprogram the memory prior to erase. th e embedded erase algorithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase. the system is not required to provide any controls or timings during these operations. after the command sequence is written, a sector erase time - out of 50 m s begins. during the time - out period, additional sector addresses and sector erase commands may be written. loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. the time between these additional cycles must be less than 50 m s, otherwise the last address and command might not be accepted, and erasure may begin. it is recommended that processor interrupts be disabled during this time to ensure all commands a re accepted. the interrupts can be re - enabled after the last sector erase command is written. if the time between additional sector erase commands can be assumed to be less than 50 m s, the system need not monitor i/o 3 . any command other than sector erase or erase suspend during the time - out period resets the device to reading array data. the system must rewrite the command sequence and any additional sector addresses and commands. the system can monitor i/o 3 to determine if the sector erase timer has timed out. (see the " i/o 3 : sector erase timer" section.) the time - out begins from the rising edge of the final we pulse in the command sequence. once the sector erase operation has begun, only the erase suspend command is valid. all other commands are ignored. when the embedded erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. the system can determine the status of the erase operation by using i/o 7 , i/o 6 , or i/o 2 . refer to "write ope ration status" for information on these status bits. start write program command sequence data poll from system verify data ? last address ? programming completed no yes yes increment address embedded program algorithm in progress note : see the appropriate command definitions table for program command sequence. figure 2. program operation
A29800 series preliminary (may, 2001, version 0.0) 12 amic technology, inc. start write erase command sequence data poll from system data = ffh ? erasure completed yes embedded erase algorithm in progress note : 1. see the appropriate command definitions table for erase command sequences. 2. see "i/o 3 : sector erase timer" for more information. no figure 3. erase operation figure 3 illustrates the algorithm for the erase operation. refer to the erase/program operations tables in the "ac characteristics" section for parameters, and to the sector erase operations timing di agram for timing waveforms. erase suspend/erase resume commands the erase suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. this command is valid only during the sector erase operation, including the 50 m s time - out period during the sector erase command sequence. the erase suspend command is ignored if written during the chip erase operation or embedded program algorithm. writing the erase suspend comman d during the sector erase time - out immediately terminates the time - out period and suspends the erase operation. addresses are "don't cares" when writing the erase suspend command. when the erase suspend command is written during a sector erase operation, the device requires a maximum of 20 m s to suspend the erase operation. however, when the erase suspend command is written during the sector erase time - out, the device immediately terminates the time - out period and suspends the erase operation. after the er ase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (the device "erase suspends" all sectors selected for erasure.) normal read and write timings and command definitions apply. readi ng at any address within erase - suspended sectors produces status data on i/o 7 - i/o 0 . the system can use i/o 7 , or i/o 6 and i/o 2 together, to determine if a sector is actively erasing or is erase - suspended. see "write operation status" for information on th ese status bits. after an erase - suspended program operation is complete, the system can once again read array data within non - suspended sectors. the system can determine the status of the program operation using the i/o 7 or i/o 6 status bits, just as in th e standard program operation. see "write operation status" for more information. the system may also write the autoselect command sequence when the device is in the erase suspend mode. the device allows reading autoselect codes even at addresses within er asing sectors, since the codes are not stored in the memory array. when the device exits the autoselect mode, the device reverts to the erase suspend mode, and is ready for another valid operation. see "autoselect command sequence" for more information. t he system must write the erase resume command (address bits are "don't care") to exit the erase suspend mode and continue the sector erase operation. further writes of the resume command are ignored. another erase suspend command can be written after the d evice has resumed erasing.
A29800 series preliminary (may, 2001, version 0.0) 13 amic technology, inc. table 5. A29800 command definitions bus cycles (notes 2 - 5) first second third fourth fifth sixth command sequence (note 1) cycles addr data addr data addr data addr data addr d ata addr data read (note 6) 1 ra rd reset (note 7) 1 xxx f0 word 555 2aa 555 manufacturer id byte 4 aaa aa 555 55 aaa 90 x00 37 word 555 2aa 555 x01 b30e device id, top boot block byte 4 aaa aa 555 55 aaa 90 x02 0e word 555 2aa 555 x01 b38f device id, bottom boot block byte 4 aaa aa 555 55 aaa 90 x02 8f word 555 2aa 555 x03 continuation id byte 4 aaa aa 555 55 aaa 90 x06 7f xx00 word 555 2aa 555 (sa) x02 xx01 00 autoselect (note 8) sector protect veri fy (note 9) byte 4 aaa aa 555 55 aaa 90 (sa) x04 01 word 555 2aa 555 program byte 4 aaa aa 555 55 aaa a0 pa pd word 555 2aa 555 55 5 2aa 555 chip erase byte 6 aaa aa 555 55 aaa 80 aaa aa 555 55 aaa 10 word 555 2aa 555 555 2aa sector erase byte 6 aaa aa 555 55 aaa 80 aaa aa 555 55 sa 30 erase suspend (note 9) 1 xxx b0 erase resume (note 10) 1 xxx 30 legend: x = do n't care ra = address of the memory location to be read. rd = data read from location ra during read operation. pa = address of the memory location to be programmed. addresses latch on the falling edge of the we or ce pulse, whichever happens later. pd = data to be programmed at location pa. data latches on the rising edge of we or ce pulse, whichever happens first. sa = address of the sector to be verified (in autoselect mo de) or erased. address bits a18 - a12 select a unique sector. note: 1. see table 1 for description of bus operations. 2. all values are in hexadecimal. 3. except when reading array or autoselect data, all bus cycles are write operation. 4. address bits a18 - a11 are d on't cares for unlock and command cycles, unless sa or pa required. 5. no unlock or command cycles required when reading array data. 6. the reset command is required to return to reading array data when device is in the autoselect mode, or if i/o 5 goes high (whi le the device is providing status data). 7. the fourth cycle of the autoselect command sequence is a read cycle. 8. the data is 00h for an unprotected sector and 01h for a protected sector. see "autoselect command sequence" for more information. 9. the system may r ead and program in non - erasing sectors, or enter the autoselect mode, when in the erase suspend mode. 10. the erase resume command is valid only during the erase suspend mode.
A29800 series preliminary (may, 2001, version 0.0) 14 amic technology, inc. write operation status several bits, i/o 2 , i/o 3 , i/o 5 , i/o 6 , i/o 7, ry/ by are provided in the A29800 to determine the status of a write operation. table 6 and the following subsections describe the functions of these status bits. i/o 7 , i/o 6 and ry/ by each offer a method for determining whether a program or erase operation is complete or in progress. these three bits are discussed first. i/o 7 : data polling the data polling bit, i/o 7 , indicates to the host system whether an embedded algorithm is in progress or completed, or whether the device is in erase suspend. data polling is valid after the rising edge of the final we pulse in the program or erase command sequence. during the embedded program algorithm, the device outputs on i/o 7 the complement of the datum programmed to i/o 7 . this i/o 7 status also applies to programming during erase suspend. when the embedded program algorithm is complete, the device outputs the datum programmed to i/o 7 . the system must provide the program address to read valid status information on i/o 7 . if a program address falls within a protected sector, data polling on i/o 7 is active for approximately 2 m s, then the device returns to reading array data. during the embedded er ase algorithm, data polling produces a "0" on i/o 7 . when the embedded erase algorithm is complete, or if the device enters the erase suspend mode, data polling produces a "1" on i/o 7 .this is analogous to the complement /true datum output described for the embedded program algorithm: the erase function changes all the bits in a sector to "1"; prior to this, the device outputs the "complement," or "0." the system must provide an address within any of the sectors selected for erasure to read valid status information on i/o 7 . after an erase command sequence is written, if all sectors selected for erasing are protected, data polling on i/o 7 is active for approximately 100 m s, then the device returns to readi ng array data. if not all selected sectors are protected, the embedded erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. when the system detects i/o 7 has changed from the complement to true data, it can r ead valid data at i/o 7 - i/o 0 on the following read cycles. this is because i/o 7 may change asynchronously with i/o 0 - i/o 6 while output enable ( oe ) is asserted low. the data polling timings (during embedded algorith ms) figure in the "ac characteristics" section illustrates this. table 6 shows the outputs for data polling on i/o 7 . figure 4 shows the data polling algorithm. start read i/o 7 -i/o 0 address = va i/o 7 = data ? fail no note : 1. va = valid address for programming. during a sector erase operation, a valid address is an address within any sector selected for erasure. during chip erase, a valid address is any non-protected sector address. 2. i/o 7 should be rechecked even if i/o 5 = "1" because i/o 7 may change simultaneously with i/o 5 . no read i/o 7 - i/o 0 address = va i/o 5 = 1? i/o 7 = data ? yes no pass yes yes figure 4. data polling algorithm
A29800 series preliminary (may, 2001, version 0.0) 15 amic technology, inc. ry/ by : read/ busy the ry/ by is a dedicated, open - drain output pin that indicates whether an embedded algorithm is in progress or complete. the ry/ by status is valid after the rising edge of the final we puls e in the command sequence. since ry/ by is an open - drain output, several ry/ by pins can be tied together in parallel with a pull - up resistor to vcc. if the output is low (busy), the device is actively erasing or pr ogramming. (this includes programming in the erase suspend mode.) if the output is high (ready), the device is ready to read array data (including during the erase suspend mode), or is in the standby mode. table 6 shows the outputs for ry/ by . refer to ? reset timings?, ?timing waveforms for program operation? and ?timing waveforms for chip/sector erase operation? for more information. i/o 6 : toggle bit i toggle bit i on i/o 6 indicates whether an embedded program or eras e algorithm is in progress or complete, or whether the device has entered the erase suspend mode. toggle bit i may be read at any address, and is valid after the rising edge of the final we pulse in the command sequence (prior to the p rogram or erase operation), and during the sector erase time - out. during an embedded program or erase algorithm operation, successive read cycles to any address cause i/o 6 to toggle. (the system may use either oe or ce to control the read cycles.) when the operation is complete, i/o 6 stops toggling. after an erase command sequence is written, if all sectors selected for erasing are protected, i/o 6 toggles for approximately 100 m s, then returns to reading array data . if not all selected sectors are protected, the embedded erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. the system can use i/o 6 and i/o 2 together to determine whether a sector is actively erasing or i s erase - suspended. when the device is actively erasing (that is, the embedded erase algorithm is in progress), i/o 6 toggles. when the device enters the erase suspend mode, i/o 6 stops toggling. however, the system must also use i/o 2 to determine which secto rs are erasing or erase - suspended. alternatively, the system can use i/o 7 (see the subsection on " i/o 7 : data polling"). if a program address falls within a protected sector, i/o 6 toggles for approximately 2 m s after the program command sequence is written, then returns to reading array data. i/o 6 also toggles during the erase - suspend - program mode, and stops toggling once the embedded program algorithm is complete. the write operation status table shows the outputs for toggle bit i on i/o 6 . refer to figure 5 for the toggle bit algorithm, and to the toggle bit timings figure in the "ac characteristics" section for the timing diagram. the i/o 2 vs. i/o 6 figure shows the differences between i/o 2 and i/o 6 in graphical form. see also the subs ection on " i/o 2 : toggle bit ii". i/o 2 : toggle bit ii the "toggle bit ii" on i/o 2 , when used with i/o 6 , indicates whether a particular sector is actively erasing (that is, the embedded erase algorithm is in progress), or whether that sector is erase - susp ended. toggle bit ii is valid after the rising edge of the final we pulse in the command sequence. i/o 2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (the system may use either oe or ce to control the read cycles.) but i/o 2 cannot distinguish whether the sector is actively erasing or is erase - suspended. i/o 6 , by comparison, indicates whether the device is actively erasing, or is in erase su spend, but cannot distinguish which sectors are selected for erasure. thus, both status bits are required for sector and mode information. refer to table 6 to compare outputs for i/o 2 and i/o 6 . figure 5 shows the toggle bit algorithm in flowchart form, and the section " i/o 2 : toggle bit ii" explains the algorithm. see also the " i/o 6 : toggle bit i" subsection. refer to the toggle bit timings figure for the toggle bit timing diagram. the i/o 2 vs. i/o 6 figure shows the differences between i/o 2 and i/o 6 in gra phical form. reading toggle bits i/o 6 , i/o 2 refer to figure 5 for the following discussion. whenever the system initially begins reading toggle bit status, it must read i/o 7 - i/o 0 at least twice in a row to determine whether a toggle bit is toggling. typ ically, a system would note and store the value of the toggle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device has completed the program or erase operation. the system can read array data on i/o 7 - i/o 0 on the following read cycle. however, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of i/o 5 is high (see the section on i/o 5 ). if it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as i/o 5 went high. if the toggle bit is no longer toggling, the device has success fully completed the program or erase operation. if it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. the remaining scenario is that the system initial ly determines that the toggle bit is toggling and i/o 5 has not gone high. the system may continue to monitor the toggle bit and i/o 5 through successive read cycles, determining the status as described in the previous paragraph. alternatively, it may choose to perform other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of figure 5).
A29800 series preliminary (may, 2001, version 0.0) 16 amic technology, inc. i/o 5 : exceeded timing limits i/o 5 indicates whether the program or erase t ime has exceeded a specified internal pulse count limit. under these conditions i/o 5 produces a "1." this is a failure condition that indicates the program or erase cycle was not successfully completed. the i/o 5 failure condition may appear if the system t ries to program a "1 "to a location that is previously programmed to "0." only an erase operation can change a "0" back to a "1." under this condition, the device halts the operation, and when the operation has exceeded the timing limits, i/o 5 produces a " 1." under both these conditions, the system must issue the reset command to return the device to reading array data. i/o 3 : sector erase timer after writing a sector erase command sequence, the system may read i/o 3 to determine whether or not an erase o peration has begun. (the sector erase timer does not apply to the chip erase command.) if additional sectors are selected for erasure, the entire time - out also applies after each additional sector erase command. when the time - out is complete, i/o 3 switches from "0" to "1." the system may ignore i/o 3 if the system can guarantee that the time between additional sector erase commands will always be less than 50 m s. see also the "sector erase command sequence" section. after the sector erase command sequence is written, the system should read the status on i/o 7 ( data polling) or i/o 6 (toggle bit 1) to ensure the device has accepted the command sequence, and then read i/o 3 . if i/o 3 is "1", the internally controlled erase cycle has begun; all fu rther commands (other than erase suspend) are ignored until the erase operation is complete. if i/o 3 is "0", the device will accept additional sector erase commands. to ensure the command has been accepted, the system software should check the status of i/ o 3 prior to and following each subsequent sector erase command. if i/o 3 is high on the second status check, the last command might not have been accepted. table 6 shows the outputs for i/o 3 . start read i/o 7 -i/o 0 toggle bit = toggle ? program/erase operation not commplete, write reset command yes notes : 1. read toggle bit twice to determine whether or not it is toggling. see text. 2. recheck toggle bit because it may stop toggling as i/o 5 changes to "1". see text. no read i/o 7 - i/o 0 twice i/o 5 = 1? toggle bit = toggle ? yes yes program/erase operation complete no no read i/o 7 -i/o 0 (notes 1,2) figure 5. toggle bit algorithm (note 1)
A29800 series preliminary (may, 2001, version 0.0) 17 amic technology, inc. table 6. write operation status i/o 7 i/o 6 i/o 5 i/o 3 i/o 2 ry/ by operation (note 1) (note 2) (note 1) embedded program algorithm 7 i/o toggle 0 n/a no toggle 0 standard mode embedded erase algorithm 0 toggle 0 1 toggle 0 reading within erase suspended s ector 1 no toggle 0 n/a toggle 1 reading within non - erase suspend sector data data data data data 1 erase suspend mode erase - suspend - program 7 i/o toggle 0 n/a n/a 0 notes: 1. i/o 7 and i/o 2 require a valid address when reading status information. refer to the appropriate subsection for further details. 2. i/o 5 switches to ?1? when an embedded program or embedded erase operation has exceeded the maximum timing limits. see ?i/o5: exceeded timing limits? for more information. maximum negative input overshoot 20ns 20ns 20ns +0.8v -0.5v -2.0v maximum positive input overshoot 20ns 20ns 20ns vcc +0.5v 2.0v vcc +2.0v
A29800 series preliminary (may, 2001, version 0.0) 18 amic technology, inc. dc characteristics ttl/nmos compatible parameter symbol parameter description test description min. typ. max. unit i li input load current v in = vss to vcc. vc c = vcc max 1.0 m a i lit a9, oe & reset input load current vcc = vcc max, a9, oe & reset =12.5v 100 m a i lo output leakage current v out = vss to vcc. vcc = vcc max 1.0 m a i cc 1 vcc active read current (notes 1, 2) ce = v il , oe = v ih 20 30 ma i cc2 vcc active write (program/erase) current (notes 2, 3, 4) ce = v il , oe =v ih 30 40 ma i cc3 vcc sta ndby current (note 2) ce = v ih , reset = vcc 0.5v 0.4 1.0 ma v il input low level - 0.5 0.8 v v ih input high level 2.0 vcc+0.5 v v id voltage for autoselect and temporary unprotect sector vcc = 5.25 v 10.5 12.5 v v ol output low voltage i ol = 12ma, vcc = vcc min 0.45 v v oh output high voltage i oh = - 2.5 ma, vcc = vcc min 2.4 v cmos compatible parameter symbol parameter description test description min. typ. max. unit i li input load current v in = vss to vcc , vcc = vcc max 1.0 m a i lit a9, oe & reset input load current vcc = vcc max, a9, oe & reset = 12.5v 50 m a i lo output leakage current v out = vss to vcc, vcc = vcc max 1.0 m a i cc1 vcc active read current (notes 1,2) ce = v il , oe = v ih 20 30 ma i cc2 vcc active program/erase current (notes 2,3,4) ce = v il , oe = v ih 30 40 ma i cc3 vcc standby current (notes 2, 5) ce = reset = vcc 0.5 v 1 5 m a v il input low level - 0.5 0.8 v v ih input high level 0.7 x vcc vcc+0.3 v v id voltage for autoselect and temporary sector unprotect vcc = 5.25 v 10.5 12.5 v v ol output low voltage i ol = 12.0 ma, vcc = vcc min 0.45 v v oh1 i oh = - 2.5 ma, vcc = vcc min 0.85 x vcc v v oh2 output high voltage i oh = - 100 m a. vcc = vcc min vcc - 0.4 v notes for dc characteristics (both tables): 1. the i cc current listed include s both the dc operation current and the frequency dependent component (at 6 mhz). the frequency component typically is less than 2 ma/mhz, with oe at v ih . 2. maximum i cc specifications are tested with vcc = vcc max. 3. i cc active while embedde d algorithm (program or erase) is in progress. 4. not 100% tested. 5. for cmos mode only, i cc3 = 20 m a max at extended temperatures (> +85 c).
A29800 series preliminary (may, 2001, version 0.0) 19 amic technology, inc. ac characteristics read only operations parameter symbols speed jedec std description test setup - 55 - 70 - 90 unit t avav t rc read cycle time (note 2) min. 55 70 90 ns t avqv t acc address to output delay ce = v il oe = v il max. 55 70 90 ns t elqv t ce chip enable to output delay oe = v il max. 55 70 90 ns t glqv t oe output enable to output delay max. 30 30 35 ns read min. 0 0 0 ns t oeh output enable hold time (note 2) toggle and data polling min. 10 10 10 ns t ehqz t df chip enable to output high z (notes 1,2) max. 18 20 20 ns t ghqz t df output enable to output high z (notes 1,2) 18 20 20 ns t axqx t oh output hold time from addresses, ce or oe , whichever occurs first min. 0 0 0 ns notes: 1. output driver disable time. 2. not 100% tested. tim ing waveforms for read only operation addresses addresses stable ce oe we output valid high-z output t rc t oeh t oe t ce high-z t oh t df t acc 0v reset ry/by
A29800 series preliminary (may, 2001, version 0.0) 20 amic technology, inc. ac characteristics hardware reset ( reset ) parameter jedec std description test setup all speed options unit t ready reset pin low (during embedded algorithms) to read or writ e (see note) max 20 m s t ready reset pin low (not during embedded algorithms) to read or write (see note) max 500 ns t rp reset pulse width min 500 ns t rh reset high time before read (see note) min 50 ns t rb ry/ by recovery time min 0 ns note: not 100% tested. reset timings ce, oe reset t rh t rp t ready reset timings not during embedded algorithms reset t rp ~ ~ reset timings during embedded algorithms ry/by ~ ~ t rb ~ ~ t ready ce, oe ry/by
A29800 series preliminary (may, 2001, version 0.0) 21 amic technology, inc. temporary sector unprotect parameter jedec std description all speed options unit t vidr v id rise and fall time (see note ) min 500 ns t rsp reset setup time for temporary sector unprotect min 4 m s note: not 100% tested. temporary sector unprotect timing diagram program or erase command sequence reset ~ ~ ~ ~ ~ ~ 12v 0 or 5v t vidr t vidr 0 or 5v t rsp ce we ry/by ~ ~
A29800 series preliminary (may, 2001, version 0.0) 22 amic technology, inc. ac characteristics word/byte configuration ( byte ) parameter all speed options jedec std description - 55 - 70 - 90 unit t elfl/ t elfh ce to byte switching low or high max 5 ns t flqz byte switching low to output high - z max 20 20 20 ns t fhqv byte switching high to output active min 55 70 90 ns byte timings for read operations byte timings for write operations note: refer to the erase/program operations table for t as and t ah specifications. data output (i/o 0 -i/o 14 ) data output (i/o 0 -i/o 7 ) i/o 15 output address input data output (i/o 0 -i/o 7 ) i/o 15 output address input t fhqv t flqz t elfh t elfl ce oe byte i/o 0 -i/o 14 i/o 15 (a-1) byte i/o 0 -i/o 14 i/o 15 (a-1) byte switching from word to byte mode byte switching from byte to word mode data output (i/o 0 -i/o 14 ) the falling edge of the last we signal t hold (t ah ) t set (t as ) ce byte we
A29800 series preliminary (may, 2001, version 0.0) 23 amic technology, inc. ac characteri stics erase and program operations parameter speed jedec std description - 55 - 70 - 90 unit t avav t wc write cycle time (note 1) min. 55 70 90 ns t avwl t as address setup time min. 0 ns t wlax t ah address hold time min. 45 45 45 ns t dvwh t ds data setup time min. 25 30 45 ns t whdx t dh data hold time min. 0 ns t oes output enable setup time min. 0 ns t ghwl t ghwl read recover time before write ( oe high to we low) min. 0 ns t elwl t cs ce setup time min. 0 ns t wheh t ch ce hold time min. 0 ns t wlwh t wp write pulse width min. 30 35 45 ns min. 20 ns t whwl t wph write pulse width high max. 50 m s byte typ. 7 t whwh1 t whwh1 byte programming operation (note 2) word typ . 12 m s t whwh2 t whwh2 sector erase operation (note 2) typ. 1 sec t vcs vcc set up time (note 1) min. 50 m s t rb recovery time from ry/ by min 0 ns t busy program/erase valid to ry/ by delay min 30 30 35 ns notes: 1. not 100% tested. 2. see the "erase and programming performance" section for more information.
A29800 series preliminary (may, 2001, version 0.0) 24 amic technology, inc. timing waveforms for program operation addresses ce oe we data vcc a0h pd t wc pa program command sequence (last two cycles) pa d out ~ ~ ~ ~ pa ~ ~ status ~ ~ ~ ~ ~ ~ ~ ~ t as t vcs read status data (last two cycles) 555h t ah t whwh1 t ch t ghwl t wp t wph t cs t ds t dh note : 1. pa = program addrss, pd = program data, dout is the true data at the program address. 2. illustration shows device in word mode. ~ ~ t rb t busy ry/by
A29800 series preliminary (may, 2001, version 0.0) 25 amic technology, inc. addresses ce oe we data vcc 55h 30h t wc sa erase command sequence (last two cycles) va complete ~ ~ ~ ~ va ~ ~ in progress ~ ~ ~ ~ ~ ~ ~ ~ t as t vcs read status data 2aah t ah t whwh2 t ch t ghwl t wp t wph t cs t ds t dh note : 1. sa = sector address (for sector erase), va = valid address for reading status data (see "write operaion ststus"). 2. illustratin shows device in word mode. 555h for chip erase 10h for chip erase ~ ~ t rb t busy ry/by timing waveforms for chip/sector erase operation
A29800 series preliminary (may, 2001, version 0.0) 26 amic technology, inc. timing waveforms for data polling ( during embedded algorithms) addresses ce oe we i/o 7 t rc va va va ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ complement ~ ~ complement true valid data high-z status data ~ ~ status data true valid data high-z i/o 0 - i/o 6 t acc t ce t ch t oe t oeh t df t oh note : va = valid address. illustation shows first status cycle after command sequence, last status read cycle, and array data read cycle. ~ ~ t busy ry/by
A29800 series preliminary (may, 2001, version 0.0) 27 amic technology, inc. timing waveforms for toggle bit (during embedded algorithms) note: va = valid address; not required for i/o 6 . illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle. addresses ce oe we i/o 6 , i/o 2 t rc va va va ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ valid status t acc t ce t ch t oe t oeh t df t oh va valid status valid status valid data ~ ~ (first read) (second read) (stop togging) ry/by ~ ~ t busy
A29800 series preliminary (may, 2001, version 0.0) 28 amic technology, inc. timing waveforms for i/o 2 vs. i/o 6 ac characteristics erase and program operations alternate ce controlled writes parameter speed jedec std description - 55 - 70 - 90 unit t avav t wc write cycle time (note 1) min. 55 70 90 ns t avel t as address setup time min. 0 ns t elax t ah address hold time min. 40 45 45 ns t dveh t ds data setup time min. 25 30 45 ns t ehdx t dh data hold time min. 0 ns t oes output enable setup time min. 0 ns t ghel t ghel read recover time before write ( oe high to we low) min. 0 ns t wlel t ws we setup time min. 0 ns t ehwh t wh we hold time min. 0 ns t eleh t cp ce pulse width min. 30 35 45 ns t ehel t c ph ce pulse width high min. 20 20 20 ns byte typ. 7 t whwh1 t whwh1 programming operation (note 2) word typ. 12 m s t whwh2 t whwh2 sector erase operation (note 2) typ. 1 sec notes: 3. not 100% tested. 4. see the "erase and programming pe rformance" section for more information. enter embedded erasing erase suspend enter erase suspend program erase resume we i/o 6 i/o 2 erase erase suspend read erase suspend read erase erase complete i/o 2 and i/o 6 toggle with oe and ce note : both i/o 6 and i/o 2 toggle with oe or ce. see the text on i/o 6 and i/o 2 in the section "write operation statue" for more information. ~ ~ ~ ~ ~ ~ erase suspend program ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~
A29800 series preliminary (may, 2001, version 0.0) 29 amic technology, inc. timing waveforms for alternate ce controlled write operation ( reset =v ih on A29800) addresses we oe ce data 555 for program 2aa for erase pa d out ~ ~ ~ ~ i/o 7 ~ ~ ~ ~ ~ ~ data polling note : 1. pa = program address, pd = program data, sa = sector address, i/o 7 = complement of data input, d out = array data. 2. figure indicates the last two bus cycles of the command sequence. pd for program 30 for sector erase 10 for chip erase ~ ~ t busy t whwh1 or 2 t ah t as t wc t wh t ghel t cp t ws t cph pa for program sa for sector erase 555 for chip erase a0 for program 55 for erase t rh t ds t dh ~ ~ ~ ~ reset ry/by erase and programming performance parameter typ. (note 1) max. (note 2) unit comments sector erase time 1.0 8 sec chip erase time (note 3) 11 sec excludes 00h programming prior to erasure (note 4) byte programming time 35 300 m s word programming time 60 500 m s byte mode 7.2 21.6 sec chip pro gramming time (note 3) word mode 6.3 18.6 sec excludes system - level overhead (note 5) notes: 1. typical program and erase times assume the following conditions: 25 c, 5.0v vcc, 10,000 cycles. additionally, programming typically assumes checkerboard pattern. 2. under worst case conditions of 90 c, vcc = 4.5v (4.75v for - 55), 100,000 cycles. 3. the typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum byte program time listed. if the maximum byte program time given is exceeded, only then does the device set i/o 5 = 1. see the section on i/o 5 for further information. 4. in the pre - programming step of the embedded erase algorithm, all bytes are programmed to 00h before erasure. 5. system - level overhead is the time required to execute the four - bus - cycle command sequence for programming. see table 4 for further information on command definitions. 6. the device has a guaranteed minimum erase and program cycle endurance of 100,000 cycle s.
A29800 series preliminary (may, 2001, version 0.0) 30 amic technology, inc. latch - up characteristics description min. max. input voltage with respect to vss on all i/o pins - 1.0v vcc+1.0v vcc current - 100 ma +100 ma input voltage with respect to vss on all pins except i/o pins (including a9, oe and reset ) - 1.0v 12.5v includes all pins except vcc. test conditions: vcc = 5.0v, one pin at time. tsop and sop pin capacitance parameter symbol parameter description test setup typ. max. unit c in input capacitance v in =0 6 7.5 pf c out output capacitance v out =0 8.5 12 pf c in2 control pin capacitance v in =0 7.5 9 pf notes: 1. sampled, not 100% tested. 2. test conditions t a = 25 c, f = 1.0mhz data retention parameter test conditions min unit 150 c 10 years minimum pattern data retention time 125 c 20 years
A29800 series preliminary (may, 2001, version 0.0) 31 amic technology, inc. test conditions test specifications test condition - 55 all others unit output load 1 ttl gate output load capacitance, c l (including jig capacitance) 30 100 pf input rise and fall times 5 20 ns input pulse levels 0.0 - 3.0 0.45 - 2. 4 v input timing measurement reference levels 1.5 0.8, 2.0 v output timing measurement reference levels 1.5 0.8, 2.0 v test setup 6.2 k w device under test c l diodes = in3064 or equivalent 2.7 k w 5.0 v
A29800 series preliminary (may, 2001, version 0.0) 32 amic technology, inc. ordering information top boot sector flash part no. access time (ns) active read current typ. (ma) program/era se current typ. (ma) standby current typ. ( m a ) package A29800tm - 55 44pin sop A29800tv - 55 55 20 30 1 48pin tsop A29800tm - 70 44pin sop A29800tv - 70 70 20 30 1 48pin tsop A29800tm - 90 44pin sop A29800tv - 90 90 20 30 1 48pin tsop bottom boot sector flash part no. access time (ns) activ e read current typ. (ma) program/erase current typ. (ma) standby current typ. ( m a ) package A29800um - 55 44pin sop A29800uv - 55 55 20 30 1 48pin tsop A29800um - 70 44pin sop A29800uv - 70 70 20 30 1 48pin tsop A29800um - 90 44pin sop a298 00uv - 90 90 20 30 1 48pin tsop
A29800 series preliminary (may, 2001, version 0.0) 33 amic technology, inc. package information sop 44l outline dimensions unit: inches/mm 1 l l 1 c 22 see detail f detail f 23 44 s d seating plane d y e h e a 1 a 2 a e b q 0.010" gauge plane dimensions in inches dimensions in mm symbol min nom max min nom max a - - 0.118 - - 3.00 a 1 0.004 - - 0.10 - - a 2 0.103 0.106 0 .109 2.62 2.69 2.77 b 0.013 0.016 0.020 0.33 0.40 0.50 c 0.007 0.008 0.010 0.18 0.20 0.25 d - 1.122 1.130 - 28.50 28.70 e 0.490 0.496 0.500 12.45 12.60 12.70 e - 0.050 - - 1.27 - h e 0.620 0.631 0.643 15.75 16.03 16.33 l 0.024 0.032 0.040 0.61 0.80 1.02 l 1 - 0.0675 - - 1.71 - s - - 0.045 - - 1.14 y - - 0.004 - - 0.10 q 0 - 8 0 - 8 notes: 1. the maximum value of dimension d includes end flash. 2. dimension e does not include resin fins. 3. dimension s includes end flash.
A29800 series preliminary (may, 2001, version 0.0) 34 amic technology, inc. package information ts op 48l (type i) outline dimensions unit: inches/mm 1 e c d l q detail "a" 0.25 24 25 48 d 1 d y e s a 1 a 2 a detail "a" b dimensions in inches dimensions in mm symbol min nom max min nom max a - - 0.047 - - 1.20 a 1 0.002 - 0.006 0.05 - 0.15 a 2 0.037 0.039 0.042 0.94 1.00 1.06 b 0.007 0. 009 0.011 0.18 0.22 0.27 c 0.004 - 0.008 0.12 - 0.20 d 0.779 0.787 0.795 19.80 20.00 20.20 d 1 0.720 0.724 0.728 18.30 18.40 18.50 e - 0.472 0.476 - 12.00 12.10 e 0.020 basic 0.50 basic l 0.016 0.020 0.024 0.40 0.50 0.60 s 0.011 typ. 0.28 typ. y - - 0.004 - - 0.10 q 0 - 8 0 - 8 notes: 1. the maximum value of dimension d includes end flash. 2. dimension e does not include resin fins. 3. dimension s includes end flash.

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